Self-organized network of silicon oxide on epitaxial graphene için kapak resmi
Self-organized network of silicon oxide on epitaxial graphene
Başlık:
Self-organized network of silicon oxide on epitaxial graphene
Yazar:
Özkendir, Dilce, author.
Yazar Ek Girişi:
Fiziksel Tanımlama:
xiii, 69 leaves: color illustraltions.+ 1 computer laser optical disc.
Özet:
In this thesis, I studied the formation and characterization of self-organized hexagonal-shaped SiO2 wrinkle structures on epitaxial graphene that was grown on SiC substrate. Monolayer graphene was grown by annealing the SiC substrate at high temperatures under ultra-high vacuum conditions. Following the growth process, SiO2 thin film was deposited on epitaxial graphene layer at different deposition temperatures by thermal evaporation method. We found that SiO2 film wrinkles on epitaxial graphene. The origin of the hexagonal shaped wrinkle structures were derived from the thermal expansion coefficient difference between epitaxial graphene and SiO2 thin film. The mesh density of these SiO2 hexagonal wrinkle structures was controlled by changing the cooling rate of the substrate after the thin film deposition. To make a comparison, SiO2 thin film was also deposited on CVD grown graphene and on bare SiC substrate. Unlike on the bare SiC surface, SiO2 thin film on epitaxial graphene exhibited a self-assembled network of hexagonally shaped wrinkles due to thermally induced compressive strain between the two materials. The observed network of wrinkles were found to be comprised of line shaped primary and secondary types of protrusions with distinct topographic characteristics as determined by optical microscopy, Scanning Electron Microscopy and Atomic Force Microscopy measurements. The wrinkle to wrinkle spacing and mesh density of the wrinkle network were modified simply by changing the SiO2 deposition temperature. Our experimental results imply that epitaxial graphene with its high chemical inertness on SiC offers a great potential to be used as a conventional substrate in the realm of thin film metrology.
Yazar Ek Girişi:
Tek Biçim Eser Adı:
Thesis (Master)--İzmir Institute of Technology: Materials Science and Engineering.

İzmir Institute of Technology: Materials Science and Engineering--Thesis (Master).
Elektronik Erişim:
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