Nanotribological properties of graphene grown on silicon carbide semiconductor için kapak resmi
Nanotribological properties of graphene grown on silicon carbide semiconductor
Başlık:
Nanotribological properties of graphene grown on silicon carbide semiconductor
Yazar:
Keskin, Yasemin, author.
Yazar Ek Girişi:
Fiziksel Tanımlama:
xii, 41 leaves: color illustrarions, charts;+ 1 computer laser optical disc.
Özet:
In this thesis, nanotribological properties of single and multilayer graphene grown on two sides of the Silicon Carbide (SiC) semiconductors were investigated. For this purpose, epitaxial growth technique was used to obtain single-layer graphene on both C-face and Si-face. This thesis consists of two purposes: One of them is to investigate the nanotribological properties of the single and multilayer graphene grown on C-face of SiC and the other one is to compare nanotribological properties of the single layer graphene on two sides of SiC. Graphene, a two-dimensional semi-metal material, was grown epitaxially on the SiC surface under ultra-high vacuum conditions. In epitaxial method, direct current heating is applied to the SiC substrate to vaporize Si atoms from the surface. As the Si atoms evaporate, the remaining C atoms form a graphene layers on top. When single layer graphene is formed on the Si-face, multilayer graphene is formed on the C-face at the same parameters. For this reason, two different samples of graphene were needed in order to compare the tribological properties of the single layer graphene grown on both Si-face and C-face for the secondary objective. A capping method was used to control the rate of Si atoms evaporating from the SiC surface. By this way, single layer graphene on the C-face was obtained too. Number of layers were determined by Raman Spectroscopy. Nanotribological characterizations were done with Atomic Force Microscopy. The experimental results showed that single layer graphene on the Si-face has higher friction coefficient compared to single layer graphene on the C-face. It has been found that the single layer graphene (0.02) formed on the C-surface has a lower coefficient of friction than the multilayer graphene (0.82). It is expected that with the support of the theoretical studies on this results will increase the interest in this study by means of these results are new and original for the literature.
Yazar Ek Girişi:
Tek Biçim Eser Adı:
Thesis (Master)--İzmir Institute of Technology: Materials Science and Engineering.

İzmir Institute of Technology: Materials Science and Engineering--Thesis (Master).
Elektronik Erişim:
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