by
Bakali, Emine, author.
Format:
El Yazması
Alıntı:
parameters were analyzed by Scanning Electron Microscope (SEM), Atomic Force Microscope (AFM), Everson Etch
by
Özden, Selin, author.
Format:
El Yazması
Alıntı:
on undoped 625≤25 μm thick GaAs(211)B wafers. The surfaces of GaAs wafers were investigated by Atomic
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by
Günnar, Merve, author.
Format:
El Yazması
Alıntı:
microscopy (AFM), Nomarski microscopy, Fourier transformation infrared spectroscopy (FTIR) and X-ray
by
Bilgilisoy, Elif, author.
Format:
El Yazması
Alıntı:
layers were analyzed by atomic force microscopy (AFM), scanning electron microscopy (SEM) and Nomarski
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