by
Arı, Ozan, author.
Format:
El Yazması
Alıntı:
interface, growth, and annealing conditions to crystal quality / Arı, Ozan, author.
by
Şahin, Aytaç.
Format:
El Yazması
Alıntı:
Crystal growth.
by
Özmen, Bahar.
Format:
El Yazması
Alıntı:
Crystal growth
by
Polat, Mustafa, author.
Format:
El Yazması
Alıntı:
determination of suitability of their usage for CdTe buffer layer growth. Effects of these wet chemical etching
by
Tozan, Şerife.
Format:
El Yazması
Alıntı:
substrate. Firstly PLD system was carried out by using different growth parameters. Deposited films was
by
Uz, Metin.
Format:
El Yazması
Alıntı:
diffusion was followed by a decreasing release rate due to slow crystal dissolution. However, in multilayer
by
Oğuz, Kaan.
Format:
El Yazması
Alıntı:
. Ta growth on silicon had poor crystal quality due to large lattice mismatch between tantalum and
by
Yavaş, Begüm, author.
Format:
El Yazması
Alıntı:
. Crystal qualities of films were investigated by using X-ray diffraction. The surface morphology of ZnSe
by
Kurtuldu, Seher Hazal, author.
Format:
El Yazması
Alıntı:
temperature. In addition, oxide phase formation was also found to be related to these growth parameters
by
Özçeri, Elif.
Format:
El Yazması
Alıntı:
decomposition thermal CVD method was carried out using various growth parameters. To reduce the TM film surface
by
Eral Doğan, Leyla.
Format:
El Yazması
Alıntı:
precursor is low, the nanoalloys have Cd-rich and Zn-poor internal crystal structure. However, at higher
by
Tunçer, Mert.
Format:
El Yazması
Alıntı:
seen that Ag crystals were formed into AgCl crystal because of the Cl ions present in the broth media
Page
of 2